onsemi NVMFS5C423NLAFT1G
| Manufacturer | |
| MPN | NVMFS5C423NLAFT1G |
| LCSC Part # | C604593 |
| Packaging | SO-8FL |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 150A SO-8FL |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8FL | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 23nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8FL | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 23nC@4.5V |
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Features
AI Translation
- Small Footprint (5x6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVMFS5C423NLWF - Wettable Flank Option for Enhanced Optical Inspection
- AEC - Q101 Qualified and PPAP Capable
- These Devices are Pb - Free and are RoHS Compliant
In-Stock: 41
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Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.6531 | $ 2.65 |
| 10+ | $ 2.6108 | $ 26.11 |
| 30+ | $ 2.5816 | $ 77.45 |
| 100+ | $ 2.554 | $ 255.40 |
Standard Packaging1500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8FL | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 23nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8FL | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 23nC@4.5V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Small Footprint (5x6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVMFS5C423NLWF - Wettable Flank Option for Enhanced Optical Inspection
- AEC - Q101 Qualified and PPAP Capable
- These Devices are Pb - Free and are RoHS Compliant
C604593 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



