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onsemi NV25256MUW3VTBG product image
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onsemi NV25256MUW3VTBG

Manufacturer
onsemi
MPN
NV25256MUW3VTBG
LCSC Part #
C604514
Packaging
UDFN-8(2x3)
Customer #
Key Attributes
256Kbit 1.8V~5.5V 10MHz SPI UDFN-8(2x3) Memory
Datasheetpdf icononsemi NV25256MUW3VTBG
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.7569$ 1.76
10+$ 1.4901$ 14.90
30+$ 1.3219$ 39.66
100+$ 1.1507$ 115.07
500+$ 1.0736$ 536.80
1,000+$ 1.0412$ 1041.20
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
Manufactureronsemi
PackagingUDFN-8(2x3)
Operating Temperature-40℃~+125℃
FeaturesHardware write protection function;Built-in power-on reset (POR);Built-in error correction code (ECC) function;Built-in write enable latch (WEL)
Memory Size256Kbit
Voltage - Supply1.8V~5.5V
Clock Frequency10MHz
Access Time-
Data Retention - TDR (Year)100 Years
Current - Supply2mA
Write Cycle Time(tWC)5ms
Standby Supply Current5uA
InterfaceSPI
Write Cycle Endurance1,000,000 cycles
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Introduction

AI Translation

The NV25256 is a EEPROM Serial 256-Kb SPI Automotive Grade 1 device internally organized as 32Kx8 bits. This features a 64-byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus signals are clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the NV25256 device. The device features software and hardware write protection, including partial as well as full array protection. On-Chip ECC (Error Correction Code) makes the device suitable for high reliability applications.

Features

AI Translation
  • Automotive AEC-Q100 Grade 1 (-40℃ to +125℃) Qualified
  • 10 MHz (5 V) SPI Compatible
  • 1.8 V to 5.5 V Supply Voltage Range
  • SPI Modes (0,0) & (1,1)
  • 64-byte Page Write Buffer
  • Additional Identification Page with Permanent Write Protection
  • Self-timed Write Cycle
  • Hardware and Software Protection
  • Block Write Protection - Protect 1/4,1/2 or Entire EEPROM Array
  • Low Power CMOS Technology
  • 1,000,000 Program/Erase Cycles
  • 100 Year Data Retention
  • 8-pad Wettable Flank UDFN 2x3 mm Package
  • This Device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant