Taiwan Semiconductor TSM260P02CX6 RFG
| Manufacturer | Taiwan SemiconductorAsian Brands |
| MPN | TSM260P02CX6 RFG |
| LCSC Part # | C5966675 |
| Packaging | SOT-26 |
| Customer # | |
| Key Attributes | 20V 6.5A 1.56W 26mΩ@4.5V 1 P-Channel SOT-26 Single FETs, MOSFETs RoHS |
| Datasheet | |
| RoHS Compliance | 2 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | SOT-26 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6.5A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 1.56W | |
| RDS(on) | 26mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.67nF | |
| Gate Charge(Qg) | 19.5nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | SOT-26 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6.5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 1.56W | |
| RDS(on) | 26mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.67nF | |
| Gate Charge(Qg) | 19.5nC@4.5V |
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Features
AI Translation
- Fast switching
- -1.8V gate drive applications
- Lead-free plating
- RoHS compliant
- Halogen-free molding compound
Applications
AI Translation
- Battery Packs
- Portable Devices
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.2223 | $ 0.22 |
| 200+ | $ 0.0887 | $ 17.74 |
| 500+ | $ 0.0858 | $ 42.90 |
| 1,000+ | $ 0.0843 | $ 84.30 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | SOT-26 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6.5A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 1.56W | |
| RDS(on) | 26mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.67nF | |
| Gate Charge(Qg) | 19.5nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | SOT-26 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6.5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 1.56W | |
| RDS(on) | 26mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.67nF | |
| Gate Charge(Qg) | 19.5nC@4.5V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Fast switching
- -1.8V gate drive applications
- Lead-free plating
- RoHS compliant
- Halogen-free molding compound
Applications
AI Translation
- Battery Packs
- Portable Devices
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

