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ST STP10NM60N product image
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ST STP10NM60NRoHS

Manufacturer
ST
MPN
STP10NM60N
LCSC Part #
C5931917
Packaging
TO-220
Customer #
Key Attributes
600V 10A 4V 70W 550mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS
Datasheetpdf iconST STP10NM60N
In-Stock: 5
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QtyUnit PriceTotal Amount
1+$ 4.7277$ 4.73
10+$ 4.6611$ 46.61
50+$ 4.6172$ 230.86
100+$ 4.5717$ 457.17
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Output Capacitance(Coss)44pF
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)1.2pF
RDS(on)550mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)540pF
Gate Charge(Qg)19nC@10V
TypeN-Channel
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Introduction

AI Translation

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the strip layout to yield low on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features

AI Translation
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications

AI Translation
  • Switching applications