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Infineon S70GL02GS11FHB013 product image
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Infineon S70GL02GS11FHB013

Manufacturer
Infineon
MPN
S70GL02GS11FHB013
LCSC Part #
C5746477
Packaging
FBGA-64(11x13)
Customer #
Key Attributes
2Gbit 2.7V~3.6V Parallel FBGA-64(11x13) Memory RoHS
Datasheetpdf iconInfineon S70GL02GS11FHB013
RoHS Compliance1 documents available
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QtyUnit Price(Reference Only)Total Amount
1+$ 72.2191$ 72.22
200+$ 28.8165$ 5763.30
500+$ 27.8543$ 13927.15
1,000+$ 27.3784$ 27378.40
Standard Packaging1600/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerInfineon
PackagingFBGA-64(11x13)
Operating Temperature-40℃~+105℃
FeaturesPower-on reset;Hardware write protection;Software write protection;Absolute write protection
Memory Size2Gbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency-
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)-
InterfaceParallel
Standby Supply Current200uA
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Introduction

AI Translation

The S70GL02GS 2-Gb MIRRORBIT flash memory device is manufactured using 65 nm MIRRORBIT process technology. The device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a write buffer that allows programming of up to 256 words/512 bytes in a single operation, enabling faster effective programming times than standard single-byte/word programming algorithms. This makes the device an ideal product for today's embedded applications requiring higher density, better performance, and lower power consumption. This document contains information on the S70GL02GS device, which is a two-chip stack of two S29GL01GS dice. For detailed specifications, refer to the individual die data sheet.

Features

AI Translation
  • CMOS 3.0 V core with Versatile I/O
  • Two 1024-megabit (S29GL01GS) dice packaged in a single 64-ball Fortified-BGA package (see S29GL01GS datasheet for full specifications)
  • 65 nm MIRRORBIT process technology
  • Single supply VCC for read, program, erase (2.7 V to 3.6 V)
  • Versatile I/O feature
  • Wide I/O voltage (VIO): 1.65 V to VCC
  • ×16 data bus
  • 16-word/32-byte page read buffer
  • 512-byte program buffer
  • Programming in page multiples, up to 512 bytes
  • Sector erase
  • Uniform 128 KB sectors
  • S70GL02GS: 2048 sectors
  • Suspend and resume commands for program and erase operations
  • Status register, data polling, and RY/BY# pin methods to determine device status
  • Advanced Sector Protection (ASP)
  • Volatile and non-volatile protection per sector
  • Dedicated 1024-byte one-time programmable (OTP) array with two lockable regions
  • Common Flash Interface (CFI) support per device
  • WP# input protects the first or last sector, or both first and last sectors of each device, regardless of sector protection settings

Applications

AI Translation
  • Embedded applications