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Jingdao Microelectronics F10N60L
| Manufacturer | Jingdao MicroelectronicsAsian Brands |
| MPN | F10N60L |
| LCSC Part # | C5632441 |
| Packaging | TO-220F-3L |
| Customer # | |
| Key Attributes | MOSFET N-CH 600V 10A TO-220F-3L |
| Datasheet |  Jingdao Microelectronics F10N60L |
| Alternative Parts | 8 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Jingdao Microelectronics | |
| Packaging | TO-220F-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 143pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 50W | |
| RDS(on) | 1Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.643nF | |
| Gate Charge(Qg) | 19nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Jingdao Microelectronics | |
| Packaging | TO-220F-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 143pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 50W | |
| RDS(on) | 1Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.643nF | |
| Gate Charge(Qg) | 19nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
Features
AI Translation
- RDS(ON) < 1.0Ω @ Vos = 10V, ID = 5A
- Fast switching capability
- 100% Avalanche tested
- 100% △VDS tested
Applications
AI Translation
- Power management functions
- Battery-powered systems and solid-state relays
- Drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
In-Stock: 43
43 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4617 | $ 0.46 |
| 10+ | $ 0.3621 | $ 3.62 |
| 50+ | $ 0.3199 | $ 16.00 |
| 100+ | $ 0.2671 | $ 26.71 |
| 500+ | $ 0.2429 | $ 121.45 |
| 1,000+ | $ 0.2294 | $ 229.40 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Jingdao Microelectronics | |
| Packaging | TO-220F-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 143pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 50W | |
| RDS(on) | 1Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.643nF | |
| Gate Charge(Qg) | 19nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Jingdao Microelectronics | |
| Packaging | TO-220F-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 143pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 50W | |
| RDS(on) | 1Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.643nF | |
| Gate Charge(Qg) | 19nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
Features
AI Translation
- RDS(ON) < 1.0Ω @ Vos = 10V, ID = 5A
- Fast switching capability
- 100% Avalanche tested
- 100% △VDS tested
Applications
AI Translation
- Power management functions
- Battery-powered systems and solid-state relays
- Drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| F10N70L | Jingdao Microelectronics | TO-220F-3L | 333 | $ 0.6487 | ||
| F10N65L | Jingdao Microelectronics | TO-220F-3L | 24 | $ 0.4851 | ||
| F12N60L | Jingdao Microelectronics | TO-220F-3L | 35 | $ 0.5144 | ||
| F12N65L | Jingdao Microelectronics | TO-220F-3L | 135 | $ 0.6325 | ||
| F16N65L | Jingdao Microelectronics | TO-220F-3L | 36 | $ 0.7061 | ||
| F10N70 | Jingdao Microelectronics | ITO-220ABW | 0 | $ 0.7084 | ||
| F10N60 | Jingdao Microelectronics | ITO-220ABW | 0 | $ 0.5136 | ||
| F12N60 | Jingdao Microelectronics | ITO-220ABW | 0 | $ 0.7506 |