Central CMPT3019 TR PBFREE
| Manufacturer | |
| MPN | CMPT3019 TR PBFREE |
| LCSC Part # | C5599360 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 80V 100 NPN SOT-23 Single Bipolar Transistors RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Central | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | 10nA | |
| Operating Temperature | -65℃~+150℃ | |
| Transition frequency(fT) | 400MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 350mW | |
| Current - Collector(Ic) | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Central | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | 10nA | |
| Operating Temperature | -65℃~+150℃ | |
| Transition frequency(fT) | 400MHz |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 80V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 350mW | |
| Current - Collector(Ic) | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
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Introduction
AI Translation
CENTRAL SEMICONDUCTOR CMPT3019 is an NPN silicon transistor fabricated using the epitaxial planar process, housed in an epoxy-molded surface mount package, designed for high-current, general-purpose amplifier applications.
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.1136 | $ 0.11 |
| 200+ | $ 0.0453 | $ 9.06 |
| 500+ | $ 0.0438 | $ 21.90 |
| 1,000+ | $ 0.0431 | $ 43.10 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Central | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | 10nA | |
| Operating Temperature | -65℃~+150℃ | |
| Transition frequency(fT) | 400MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 350mW | |
| Current - Collector(Ic) | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Central | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | 10nA | |
| Operating Temperature | -65℃~+150℃ | |
| Transition frequency(fT) | 400MHz |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 80V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 350mW | |
| Current - Collector(Ic) | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
CENTRAL SEMICONDUCTOR CMPT3019 is an NPN silicon transistor fabricated using the epitaxial planar process, housed in an epoxy-molded surface mount package, designed for high-current, general-purpose amplifier applications.
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

