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MICROCHIP DN3545N8-G
| Manufacturer | |
| MPN | DN3545N8-G |
| LCSC Part # | C556892 |
| Packaging | SOT-89-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 450V 200mA SOT-89-3 |
| Datasheet |  MICROCHIP DN3545N8-G |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 4 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-89-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 450V | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 20Ω@0V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 360pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-89-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 450V | |
| Current - Continuous Drain(Id) | 200mA |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 20Ω@0V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 360pF |
Introduction
The DN3545 Depletion-mode normally-on transistor uses an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well-proven silicongate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors and the high-input impedance and positive-temperature coefficient inherent in MetalOxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
Features
- High Input Impedance
- Low Input Capacitance
- Fast Switching Speeds
- Low On-Resistance
- Free from Secondary Breakdown
- Low Input and Output Leakage
Applications
- Normally-On Switches
- Solid-State Relays
- Converters
- Linear Amplifiers
- Constant-Current Sources
- Power Supply Circuits
- Telecommunications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.7463 | $ 1.75 |
| 10+ | $ 1.4954 | $ 14.95 |
| 30+ | $ 1.3586 | $ 40.76 |
| 100+ | $ 1.2038 | $ 120.38 |
| 500+ | $ 1.1338 | $ 566.90 |
| 1,000+ | $ 1.1028 | $ 1102.80 |
Standard Packaging2000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-89-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 450V | |
| Current - Continuous Drain(Id) | 200mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 20Ω@0V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 360pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-89-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 450V | |
| Current - Continuous Drain(Id) | 200mA |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 20Ω@0V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 360pF |
Introduction
The DN3545 Depletion-mode normally-on transistor uses an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well-proven silicongate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors and the high-input impedance and positive-temperature coefficient inherent in MetalOxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
Features
- High Input Impedance
- Low Input Capacitance
- Fast Switching Speeds
- Low On-Resistance
- Free from Secondary Breakdown
- Low Input and Output Leakage
Applications
- Normally-On Switches
- Solid-State Relays
- Converters
- Linear Amplifiers
- Constant-Current Sources
- Power Supply Circuits
- Telecommunications
C556892 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| DMX4022E | ARK micro | SOT-89 | 1,158 | $1.2887 $1.3565 | ||
| DN2450N8-G | MICROCHIP | SOT-89-3 | 40 | $ 1.9275 | ||
| VN2460N8-G | MICROCHIP | SOT-89-3 | 0 | $ 3.095 | ||
| VN2450N8-G | MICROCHIP | SOT-89-3 | 0 | $ 3.9365 |