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onsemi FDMC86102L
| Manufacturer | |
| MPN | FDMC86102L |
| LCSC Part # | C555493 |
| Packaging | PowerWDFN-8 |
| Customer # | |
| Key Attributes | MOSFET 100V 18A PowerWDFN-8 |
| Datasheet |  onsemi FDMC86102L |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PowerWDFN-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 34mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.33nF | |
| Gate Charge(Qg) | 22nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PowerWDFN-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 34mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.33nF | |
| Gate Charge(Qg) | 22nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-Channel MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Features
AI Translation
- Shielded Gate MOSFET Technology
- Max rDS(on)=23 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on)=34 mΩ at VGS = 4.5 V, VD = 5.5 A
- Low Profile - 1 mm max in Power 33
- RoHS Compliant
Applications
AI Translation
- DC - DC Conversion
- MLP 3.3x3.3
In-Stock: 25
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.9358 | $ 0.94 |
| 10+ | $ 0.9212 | $ 9.21 |
| 30+ | $ 0.9115 | $ 27.35 |
| 100+ | $ 0.9017 | $ 90.17 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PowerWDFN-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 34mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.33nF | |
| Gate Charge(Qg) | 22nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PowerWDFN-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 34mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.33nF | |
| Gate Charge(Qg) | 22nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-Channel MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Features
AI Translation
- Shielded Gate MOSFET Technology
- Max rDS(on)=23 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on)=34 mΩ at VGS = 4.5 V, VD = 5.5 A
- Low Profile - 1 mm max in Power 33
- RoHS Compliant
Applications
AI Translation
- DC - DC Conversion
- MLP 3.3x3.3
C555493 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |