Nexperia PMV164ENEAR
| Manufacturer | |
| MPN | PMV164ENEAR |
| LCSC Part # | C553083 |
| Packaging | TO-236AB(SOT-23) |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 1.6A TOSOT-23236AB |
| Datasheet | |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | TO-236AB(SOT-23) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.6A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Pd - Power Dissipation | 640mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| RDS(on) | 164mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | 3.8nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | TO-236AB(SOT-23) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.6A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 640mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| RDS(on) | 164mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | 3.8nC@10V |
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Introduction
AI Translation
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic-level compatible
- Extended temperature range Tj = 175 °C
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)
- AEC-Q101 qualified
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Out of Stock
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Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 10+ | $ 0.0705 | $ 0.71 |
| 100+ | $ 0.0562 | $ 5.62 |
| 300+ | $ 0.0491 | $ 14.73 |
| 3,000+ | $ 0.0437 | $ 131.10 |
| 6,000+ | $ 0.0394 | $ 236.40 |
| 9,000+ | $ 0.0373 | $ 335.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | TO-236AB(SOT-23) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.6A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Pd - Power Dissipation | 640mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| RDS(on) | 164mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | 3.8nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | TO-236AB(SOT-23) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.6A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 640mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| RDS(on) | 164mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | 3.8nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic-level compatible
- Extended temperature range Tj = 175 °C
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)
- AEC-Q101 qualified
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
C553083 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SI2308A | TECH PUBLIC | SOT-23 | 3,380 | $ 0.0743 | ||
| CB2308 | CBI | SOT-23 | 3,000 | $ 0.0341 | ||
| HSS2N10A | HUASHUO | SOT-23 | 100 | $ 0.0327 | ||
| RQ5L020SNTL | ROHM | TSMT-3 | 10 | $ 0.7458 | ||
| LN2308LT1G | LRC | SOT-23 | 6,570 | $ 0.0937 | ||
| PMV88ENEAR | Nexperia | SOT-23 | 0 | $ 0.2935 | ||
| PMV164ENER | Nexperia | TO-236AB | 0 | $ 0.1808 | ||
| TSM2308CX RFG | Taiwan Semiconductor | SOT-23 | 0 | $ 0.2939 | ||
| SQ2308CES-T1_BE3 | VISHAY | SOT-23-3(TO-236-3) | 0 | $ 0.4501 | ||
| LWT1H6AM | Lewa Micro | SOT-23 | 0 | $ 0.0512 |



