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Nexperia PMN52XPX
| Manufacturer | |
| MPN | PMN52XPX |
| LCSC Part # | C552990 |
| Packaging | SOT-457 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 4.7A SOT-457 |
| Datasheet |  Nexperia PMN52XPX |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-457 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4.7A | |
| Gate Threshold Voltage (Vgs(th)) | 650mV | |
| Pd - Power Dissipation | 1.24W | |
| Reverse Transfer Capacitance (Crss@Vds) | 58pF | |
| RDS(on) | 62mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 763pF | |
| Gate Charge(Qg) | 12nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-457 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4.7A | |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.24W | |
| Reverse Transfer Capacitance (Crss@Vds) | 58pF | |
| RDS(on) | 62mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 763pF | |
| Gate Charge(Qg) | 12nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Trench MOSFET technology
- Low threshold voltage
- Enhanced power dissipation capability of 1240 mW
Applications
AI Translation
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
In-Stock: 46
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Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5626 | $ 0.56 |
| 10+ | $ 0.4581 | $ 4.58 |
| 30+ | $ 0.4058 | $ 12.17 |
| 100+ | $ 0.3551 | $ 35.51 |
| 500+ | $ 0.3244 | $ 162.20 |
| 1,000+ | $ 0.3075 | $ 307.50 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-457 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4.7A | |
| Gate Threshold Voltage (Vgs(th)) | 650mV | |
| Pd - Power Dissipation | 1.24W | |
| Reverse Transfer Capacitance (Crss@Vds) | 58pF | |
| RDS(on) | 62mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 763pF | |
| Gate Charge(Qg) | 12nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-457 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4.7A | |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.24W | |
| Reverse Transfer Capacitance (Crss@Vds) | 58pF | |
| RDS(on) | 62mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 763pF | |
| Gate Charge(Qg) | 12nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Trench MOSFET technology
- Low threshold voltage
- Enhanced power dissipation capability of 1240 mW
Applications
AI Translation
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
C552990 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SP20P35TS | Siliup | SOT-23-6L | 3,000 | $ 0.034 | ||
| FDC640PA | TWGMC | SOT-23-6 | 2,805 | $ 0.1413 | ||
| RSQ035P03TR | ROHM | SOT-457-6 | 1,595 | $ 0.2043 | ||
| FDC604P(UMW) | UMW | SOT-23-6 | 1,730 | $ 0.1191 | ||
| YJS2305A | YANGJIE | SOT-23-6L | 555 | $ 0.0815 | ||
| RQ6C050BCTCR | ROHM | SC-95 | 34 | $ 1.7087 | ||
| DMP2066LDMQ-7 | DIODES | SOT-26 | 30 | $ 0.3108 | ||
| DMP2066LDM-7 | DIODES | SOT-26 | 5 | $ 0.1305 | ||
| SP2013TS | Siliup | SOT-23-6L | 2,230 | $ 0.0358 | ||
| DMP3045LVT-13 | DIODES | TSOT-26 | 0 | $ 0.2749 |