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Nexperia PBSS4260PANP,115

Manufacturer
Nexperia
MPN
PBSS4260PANP,115
LCSC Part #
C551919
Packaging
DFN2020-6
Customer #
Key Attributes
TRANS NPN+PNP 60V 2A DFN2020-6
Datasheetpdf iconNexperia PBSS4260PANP,115
RoHS Compliance1 documents available
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.4372$ 0.44
10+$ 0.3463$ 3.46
30+$ 0.3064$ 9.19
100+$ 0.2585$ 25.85
500+$ 0.225$ 112.50
1,000+$ 0.2123$ 212.30
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerNexperia
PackagingDFN2020-6
Operating Temperature-55℃~+150℃
Current - Collector Cutoff100nA
Transition frequency(fT)140MHz;100MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain120
Pd - Power Dissipation510mW
Current - Collector(Ic)2A
Number1 NPN + 1 PNP
typeNPN+PNP
Vce Saturation(VCE(sat))365mV
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Introduction

AI Translation

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4260PAN. PNP/PNP complement: PBSS5260PAP.

Features

AI Translation
  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • High efficiency due to less heat generation
  • AEC-Q101 qualified

Applications

AI Translation
  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)