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Nexperia PBSS4112PAN,115

Manufacturer
Nexperia
MPN
PBSS4112PAN,115
LCSC Part #
C551887
Packaging
DFN2020-6
Customer #
Key Attributes
TRANS NPN 120V 1A DFN2020-6
Datasheetpdf iconNexperia PBSS4112PAN,115
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.4102$ 0.41
10+$ 0.3239$ 3.24
30+$ 0.2865$ 8.60
100+$ 0.2409$ 24.09
500+$ 0.2198$ 109.90
1,000+$ 0.2068$ 206.80
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerNexperia
PackagingDFN2020-6
Operating Temperature-55℃~+150℃
Current - Collector Cutoff100nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO120V
Emitter-Base Voltage VEBO7V
DC Current Gain375
Pd - Power Dissipation510mW
Current - Collector(Ic)1A
Number2 NPN
typeNPN
Vce Saturation(VCE(sat))170mV
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Introduction

AI Translation

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.

Features

AI Translation
  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability lC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • High energy efficiency due to less heat generation
  • AEC-Q101 qualified

Applications

AI Translation
  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)