JSMSEMI STP100N10F7-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | STP100N10F7-JSM |
| LCSC Part # | C55112121 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | 100V 100A 3V 256W 6mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 580pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 256W | |
| RDS(on) | 6mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.646nF | |
| Gate Charge(Qg) | 69nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 580pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 256W | |
| RDS(on) | 6mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.646nF | |
| Gate Charge(Qg) | 69nC | |
| Vgs | ±20V | |
| Type | N-Channel |
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In-Stock: 192
192 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.9618 | $ 0.96 |
| 10+ | $ 0.8075 | $ 8.08 |
| 50+ | $ 0.7295 | $ 36.48 |
| 100+ | $ 0.6531 | $ 65.31 |
| 500+ | $ 0.6077 | $ 303.85 |
| 1,000+ | $ 0.5849 | $ 584.90 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 580pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 256W | |
| RDS(on) | 6mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.646nF | |
| Gate Charge(Qg) | 69nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 580pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 256W | |
| RDS(on) | 6mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.646nF | |
| Gate Charge(Qg) | 69nC | |
| Vgs | ±20V | |
| Type | N-Channel |
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C55112121 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



