JSMSEMI IPP06CN10NG-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | IPP06CN10NG-JSM |
| LCSC Part # | C55112047 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | 100V 100A 3V 180W 5mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.624nF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 180W | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.628nF | |
| Gate Charge(Qg) | 61nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.624nF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 180W | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.628nF | |
| Gate Charge(Qg) | 61nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
In-Stock: 100
100 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.2413 | $ 1.24 |
| 10+ | $ 1.0658 | $ 10.66 |
| 50+ | $ 0.97 | $ 48.50 |
| 100+ | $ 0.8595 | $ 85.95 |
| 500+ | $ 0.8124 | $ 406.20 |
| 1,000+ | $ 0.7896 | $ 789.60 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.624nF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 180W | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.628nF | |
| Gate Charge(Qg) | 61nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.624nF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 180W | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.628nF | |
| Gate Charge(Qg) | 61nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

