onsemi MBRA140T3G
| Manufacturer | |
| MPN | MBRA140T3G |
| LCSC Part # | C54798 |
| Packaging | SMA(DO-214AC) |
| Customer # | |
| Key Attributes | DIODE SCHOTTKY 40V SMA(DO-214AC) |
| Datasheet | |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 20 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | onsemi | |
| Packaging | SMA(DO-214AC) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Voltage - Forward(Vf@If) | 550mV@1A | |
| Reverse Leakage Current (Ir) | 500uA@40V | |
| Non-Repetitive Peak Forward Surge Current | 30A | |
| Current - Rectified | 1A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | onsemi | |
| Packaging | SMA(DO-214AC) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+125℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Voltage - Forward(Vf@If) | 550mV@1A | |
| Reverse Leakage Current (Ir) | 500uA@40V | |
| Non-Repetitive Peak Forward Surge Current | 30A | |
| Current - Rectified | 1A |
Introduction
This device employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.
Features
- Small Compact Surface Mountable Package with J- Bent Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Very Low Forward Voltage Drop
- Guardring for Stress Protection
- NRVBA & SBRA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS Compliant
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1029 | $ 0.51 |
| 50+ | $ 0.0812 | $ 4.06 |
| 150+ | $ 0.0704 | $ 10.56 |
| 500+ | $ 0.0594 | $ 29.70 |
| 2,500+ | $ 0.0529 | $ 132.25 |
| 5,000+ | $ 0.0497 | $ 248.50 |
Standard Packaging5000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | onsemi | |
| Packaging | SMA(DO-214AC) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Voltage - Forward(Vf@If) | 550mV@1A | |
| Reverse Leakage Current (Ir) | 500uA@40V | |
| Non-Repetitive Peak Forward Surge Current | 30A | |
| Current - Rectified | 1A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | onsemi | |
| Packaging | SMA(DO-214AC) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+125℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Voltage - Forward(Vf@If) | 550mV@1A | |
| Reverse Leakage Current (Ir) | 500uA@40V | |
| Non-Repetitive Peak Forward Surge Current | 30A | |
| Current - Rectified | 1A |
Introduction
This device employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.
Features
- Small Compact Surface Mountable Package with J- Bent Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Very Low Forward Voltage Drop
- Guardring for Stress Protection
- NRVBA & SBRA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS Compliant
C54798 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SS14D | ST(Semtech) | SMA(DO-214AC) | 49,820 | $ 0.0426 | ||
| SS14-W | ZHIDE | SMA-W | 17,840 | $ 0.0289 | ||
| SS14 | YANGJIE | SMA-W | 9,800 | $ 0.0304 | ||
| MBRA140T3G | Tokmas | SMA | 7,550 | $ 0.0525 | ||
| SS14 | High Diode | SMAG | 3,450 | $ 0.0169 | ||
| SS14A | PAKER | SMA | 3,200 | $ 0.0189 | ||
| SS14 | PDW | SMA | 1,750 | $ 0.0207 | ||
| SS14 | ZHIDE | SMA | 1,420 | $ 0.0381 | ||
| FMKA140-HXY | HXY MOSFET | SMA | 197 | $0.4951 $0.6188 | ||
| B140Q-13-F-HXY | HXY MOSFET | SMA | 185 | $0.0675 $0.0843 | ||
| RBR1L40ADDTE25-HXY | HXY MOSFET | SMA | 185 | $0.2308 $0.2885 | ||
| SK14-AQ-HXY | HXY MOSFET | SMA | 185 | $0.0989 $0.1236 | ||
| MBRA140T3G-HXY | HXY MOSFET | SMA | 165 | $0.0863 $0.1078 | ||
| STPS140A-HXY | HXY MOSFET | SMA | 150 | $0.0386 $0.0454 | ||
| CMSH1-40MTR13-HXY | HXY MOSFET | SMA | 135 | $0.6904 $0.7267 | ||
| RB160L-40TE25-HXY | HXY MOSFET | SMA | 120 | $0.0608 $0.076 | ||
| STPS1L40AY-HXY | HXY MOSFET | SMA | 115 | $0.0797 $0.0996 | ||
| B140-13-F-HXY | HXY MOSFET | SMA | 40 | $0.0296 $0.0348 | ||
| SS14 | WEIDA | SMA(DO-214AC) | 20 | $0.0175 $0.0349 | ||
| SS14-W | prosemi | SMA-W | 0 | $ 0.0467 |



