LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
HXY MOSFET IPP065N06LGAKSA1-HXY product image
  • IPP065N06LGAKSA1-HXY thumbnail 1
  • IPP065N06LGAKSA1-HXY thumbnail 2
  • IPP065N06LGAKSA1-HXY thumbnail 3
  • Pinout
  • Footprint
Images for reference only

HXY MOSFET IPP065N06LGAKSA1-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IPP065N06LGAKSA1-HXY
LCSC Part #
C54582759
Packaging
TO-220
Customer #
Key Attributes
60V 80A 2.8V 120W 5.8mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET IPP065N06LGAKSA1-HXY
In-Stock: 50
50 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4289$ 0.43
10+$ 0.3428$ 3.43
50+$ 0.3071$ 15.36
100+$ 0.2616$ 26.16
500+$ 0.2161$ 108.05
1,000+$ 0.2031$ 203.10
Standard Packaging50/Full Tube
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-220
ConfigurationStandalone
Drain to Source Voltage60V
Output Capacitance(Coss)280.25pF
Current - Continuous Drain(Id)80A
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation120W
RDS(on)5.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)228pF
Number1 N-channel
Input Capacitance(Ciss)3.629nF
Gate Charge(Qg)80.85nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Introduction

AI Translation

IPP065N06LGAKSA1 adopts advanced trench technology and design, delivering excellent on-resistance (RDS(ON)) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 60V, Drain Current (ID) = 80A
  • RDS(ON) < 7mΩ at VGS = 10V

Applications

AI Translation
  • High-efficiency switch-mode power supplies
  • Power factor correction
  • Electronic lamp ballasts