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HXY MOSFET SI4461DY-T1-GE3-HXY product image
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HXY MOSFET SI4461DY-T1-GE3-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
SI4461DY-T1-GE3-HXY
LCSC Part #
C54582717
Packaging
SOP-8
Customer #
Key Attributes
30V 15A 1.6V 25.6W 7.5mΩ@10V 1 P-Channel P-Channel SOP-8 Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET SI4461DY-T1-GE3-HXY
In-Stock: 49
49 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.6636$ 1.66
10+$ 1.4005$ 14.01
30+$ 1.2559$ 37.68
100+$ 1.0934$ 109.34
500+$ 0.9115$ 455.75
1,000+$ 0.8773$ 877.30
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOP-8
ConfigurationStandalone
Drain to Source Voltage30V
Current - Continuous Drain(Id)15A
Output Capacitance(Coss)400pF
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation25.6W
RDS(on)7.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)360pF
Number1 P-Channel
Input Capacitance(Ciss)3.36nF
Gate Charge(Qg)35nC@10V
TypeP-Channel
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Introduction

AI Translation

The SI4461DY-T1-GE3 employs advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation down to 4.5V gate voltage. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • VDS = -30V, ID = -15A
  • RDS(ON) < 10mΩ (@ VGS = -10V)

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply