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HXY MOSFET SUD50N10-18P-E3-HXY product image
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HXY MOSFET SUD50N10-18P-E3-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
SUD50N10-18P-E3-HXY
LCSC Part #
C54582608
Packaging
TO-252-2L
Customer #
Key Attributes
100V 60A 1.7V 67.5W 13.5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET SUD50N10-18P-E3-HXY
In-Stock: 48
48 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.8497$ 0.85
10+$ 0.697$ 6.97
30+$ 0.6206$ 18.62
100+$ 0.5459$ 54.59
500+$ 0.4468$ 223.40
1,000+$ 0.4241$ 424.10
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage100V
Current - Continuous Drain(Id)60A
Output Capacitance(Coss)144pF
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation67.5W
Reverse Transfer Capacitance (Crss@Vds)11.3pF
RDS(on)13.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.208nF
Gate Charge(Qg)22.7nC@10V
TypeN-Channel
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Introduction

AI Translation

SUD50N10-18P-E3 utilizes advanced SGT MOSFET technology, delivering low on-resistance (RDS(ON)), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability. Available in a TO-252-2L package.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 100V, Drain Current (ID) = 60A
  • On-Resistance (RDS(ON)) < 17mΩ at VGS = 10V
  • Pin 3: Source (S)
  • N-Channel MOSFET

Applications

AI Translation

Consumer electronics power supplies, motor control, synchronous rectification, isolated DC, synchronous rectification applications