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HXY MOSFET STP35NF10-HXY product image
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HXY MOSFET STP35NF10-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
STP35NF10-HXY
LCSC Part #
C54582593
Packaging
TO-220
Customer #
Key Attributes
100V 33A 4V 130W 30mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET STP35NF10-HXY
In-Stock: 24
24 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.6837$ 0.68
10+$ 0.5541$ 5.54
50+$ 0.4893$ 24.47
100+$ 0.4261$ 42.61
500+$ 0.3873$ 193.65
1,000+$ 0.3678$ 367.80
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-220
ConfigurationStandalone
Drain to Source Voltage100V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)33A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation130W
RDS(on)30mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)26pF
Number1 N-channel
Input Capacitance(Ciss)1.28nF
Gate Charge(Qg)20nC@10V
TypeN-Channel
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Introduction

AI Translation

The STP35NF10 utilizes advanced trench technology and design to deliver excellent on-state resistance (RDS(ON)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage (VDS) = 100V, drain current (ID) = 33A
  • On-resistance (RDS(ON)) < 38mΩ at gate-source voltage (VGS) = 10V

Applications

AI Translation
  • High-efficiency switch-mode power supplies
  • Power factor correction
  • Electronic lamp ballasts