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HXY MOSFET SUD50N04-09H-E3-HXY product image
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HXY MOSFET SUD50N04-09H-E3-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
SUD50N04-09H-E3-HXY
LCSC Part #
C54582547
Packaging
TO-252-2L
Customer #
Key Attributes
40V 60A 1.5V 34.6W 7.7mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET SUD50N04-09H-E3-HXY
In-Stock: 8
8 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5574$ 0.56
10+$ 0.4521$ 4.52
30+$ 0.4002$ 12.01
100+$ 0.3468$ 34.68
500+$ 0.316$ 158.00
1,000+$ 0.2998$ 299.80
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage40V
Output Capacitance(Coss)148pF
Current - Continuous Drain(Id)60A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation34.6W
Reverse Transfer Capacitance (Crss@Vds)112pF
RDS(on)7.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.639nF
Gate Charge(Qg)16nC@4.5V
TypeN-Channel
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Introduction

AI Translation

The SUD50N04-09H-E3 utilizes advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-source voltage VDS = 40V, drain current ID = 60A
  • On-resistance RDS(ON) < 10mΩ at gate-source voltage VGS = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply