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HXY MOSFET SUD50P04-08-GE3-HXY product image
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HXY MOSFET SUD50P04-08-GE3-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
SUD50P04-08-GE3-HXY
LCSC Part #
C54582533
Packaging
TO-252-2L
Customer #
Key Attributes
40V 80A 1.6V 81W 6.4mΩ@10V 1 P-Channel P-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET SUD50P04-08-GE3-HXY
In-Stock: 4
4 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.9543$ 0.95
10+$ 0.7745$ 7.75
30+$ 0.6837$ 20.51
100+$ 0.5946$ 59.46
500+$ 0.5412$ 270.60
1,000+$ 0.5136$ 513.60
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)430pF
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation81W
RDS(on)6.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)385pF
Number1 P-Channel
Input Capacitance(Ciss)5.295nF
Gate Charge(Qg)110nC@10V
TypeP-Channel
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Introduction

AI Translation

SUD50P04-08-GE3 utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications. Available in TO-252-2L package.

Features

AI Translation
  • Drain-Source Voltage (VDS) = -40V, Drain Current (ID) = -80A
  • On-Resistance (RDS(ON)) < 8.2mΩ at VGS = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply
  • P-channel MOSFET