LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
HXY MOSFET IPD033N06NATMA1-HXY product image
  • IPD033N06NATMA1-HXY thumbnail 1
  • IPD033N06NATMA1-HXY thumbnail 2
  • IPD033N06NATMA1-HXY thumbnail 3
  • Pinout
  • Footprint
Images for reference only

HXY MOSFET IPD033N06NATMA1-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IPD033N06NATMA1-HXY
LCSC Part #
C54582488
Packaging
TO-252-2L
Customer #
Key Attributes
60V 130A 1.6V 140W 3mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET IPD033N06NATMA1-HXY
In-Stock: 49
49 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.7516$ 1.75
10+$ 1.5081$ 15.08
30+$ 1.3555$ 40.67
100+$ 1.1981$ 119.81
500+$ 1.1266$ 563.30
1,000+$ 1.0958$ 1095.80
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage60V
Output Capacitance(Coss)1.666nF
Current - Continuous Drain(Id)130A
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)77.7pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.377nF
Gate Charge(Qg)66.1nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Introduction

AI Translation

IPD033N06NATMA1 employs advanced SGT MOSFET technology to deliver low on-state resistance (RDS(ON)), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced ruggedness.

Features

AI Translation
  • Drain-source voltage (VDS) = 60V, drain current (ID) = 130A
  • On-resistance (RDS(ON)) < 3.5mΩ at gate-source voltage (VGS) = 10V

Applications

AI Translation

Consumer electronics power supplies, motor control, synchronous rectification, isolated DC synchronous rectification applications