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HXY MOSFET SUD50N02-06P-E3-HXY product image
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HXY MOSFET SUD50N02-06P-E3-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
SUD50N02-06P-E3-HXY
LCSC Part #
C54582424
Packaging
TO-252-2L
Customer #
Key Attributes
20V 60A 750mV 60W 4.5mΩ@4.5V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET SUD50N02-06P-E3-HXY
In-Stock: 50
50 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 2.1023$ 2.10
10+$ 1.8084$ 18.08
30+$ 1.625$ 48.75
100+$ 1.4367$ 143.67
500+$ 1.3523$ 676.15
1,000+$ 1.3149$ 1314.90
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage20V
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)60A
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)4.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2nF
Gate Charge(Qg)27nC@10V
TypeN-Channel
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Introduction

AI Translation

The SUD50N02-06P-E3 utilizes advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications. Available in a TO-252-2L package.

Features

AI Translation
  • VDS = 20V, ID = 60A
  • RDS(ON) < 6mΩ (@ VGS = 4.5V)

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply
  • N-channel MOSFET