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VBsemi Elec SI4466DY-T1-E3-VB product image
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VBsemi Elec SI4466DY-T1-E3-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
SI4466DY-T1-E3-VB
LCSC Part #
C5444645
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH 30V 18A SO-8
Datasheetpdf iconVBsemi Elec SI4466DY-T1-E3-VB
In-Stock: 8
8 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4779$ 0.4063$ 0.41
10+$ 0.3779$ 0.3213$ 3.21
30+$ 0.3351$ 0.2849$ 8.55
100+$ 0.2827$ 0.2403$ 24.03
500+$ 0.2588$ 0.2200$ 110.00
1,000+$ 0.243$ 0.2066$ 206.60
Standard Packaging4000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingSO-8
Operating Temperature-55℃~+150℃
Drain to Source Voltage30V
Current - Continuous Drain(Id)18A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)73pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)820pF
Gate Charge(Qg)6.8nC@10V
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Features

AI Translation
  • Halogen-free
  • Trench power MOSFET
  • Optimized for high-side synchronous rectifier operation
  • 100% Rg tested
  • 100% UIS tested

Applications

AI Translation
  • Laptop CPU core
  • High-end switching