FUXINSEMI AO3401A
| Manufacturer | FUXINSEMIAsian Brands |
| MPN | AO3401A |
| LCSC Part # | C5380686 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 4.2A SOT-23 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | FUXINSEMI | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 4.2A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 90mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 880pF | |
| Gate Charge(Qg) | 7.2nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | FUXINSEMI | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 4.2A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 90mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 880pF | |
| Gate Charge(Qg) | 7.2nC |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Advanced trench process technology
- High density cell design for ultra low on-resistance
Applications
AI Translation
- Load Switch for Portable Devices
- DC/DC Converter
In-Stock: 3,080
3,080 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0422$ 0.0380 | $ 0.76 |
| 200+ | $ 0.0343$ 0.0309 | $ 6.18 |
| 600+ | $ 0.0299$ 0.0270 | $ 16.20 |
| 3,000+ | $ 0.0259$ 0.0234 | $ 70.20 |
| 9,000+ | $ 0.0237$ 0.0214 | $ 192.60 |
| 21,000+ | $ 0.0224$ 0.0202 | $ 424.20 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | FUXINSEMI | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 4.2A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 90mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 880pF | |
| Gate Charge(Qg) | 7.2nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | FUXINSEMI | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 4.2A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 90mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 880pF | |
| Gate Charge(Qg) | 7.2nC |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Advanced trench process technology
- High density cell design for ultra low on-resistance
Applications
AI Translation
- Load Switch for Portable Devices
- DC/DC Converter
C5380686 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



