FUXINSEMI AO3400A
| Manufacturer | FUXINSEMIAsian Brands |
| MPN | AO3400A |
| LCSC Part # | C5380685 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 5.8A SOT-23 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | FUXINSEMI | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 52mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 630pF | |
| Gate Charge(Qg) | 17.5nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | FUXINSEMI | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 52mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 630pF | |
| Gate Charge(Qg) | 17.5nC |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Advanced trench process technology
- High density cell design for ultra low on-resistance
Applications
AI Translation
- Load Switch for Portable Devices
- DC/DC Converter
In-Stock: 5,660
5,660 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0407$ 0.0245 | $ 0.25 |
| 100+ | $ 0.0328$ 0.0197 | $ 1.97 |
| 300+ | $ 0.0284$ 0.0171 | $ 5.13 |
| 3,000+ | $ 0.0258$ 0.0155 | $ 46.50 |
| 6,000+ | $ 0.0235$ 0.0141 | $ 84.60 |
| 9,000+ | $ 0.0222$ 0.0134 | $ 120.60 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | FUXINSEMI | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 52mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 630pF | |
| Gate Charge(Qg) | 17.5nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | FUXINSEMI | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 52mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 630pF | |
| Gate Charge(Qg) | 17.5nC |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Advanced trench process technology
- High density cell design for ultra low on-resistance
Applications
AI Translation
- Load Switch for Portable Devices
- DC/DC Converter
C5380685 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



