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Infineon IRFR9024NTRLPBFRoHS

Manufacturer
Infineon
MPN
IRFR9024NTRLPBF
LCSC Part #
C537995
Packaging
DPAK(TO-252AA)
Customer #
Key Attributes
MOSFET P-CH 55V 11A DPAK(TO-252AA)
Datasheetpdf iconInfineon IRFR9024NTRLPBF
In-Stock: 1
1 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.7038$ 0.70
10+$ 0.5763$ 5.76
30+$ 0.5133$ 15.40
100+$ 0.4503$ 45.03
500+$ 0.4119$ 205.95
1,000+$ 0.3919$ 391.90
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingDPAK(TO-252AA)
Operating Temperature-55℃~+150℃
Drain to Source Voltage55V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)11A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)92pF
RDS(on)175mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)350pF
Gate Charge(Qg)19nC@10V
Vgs±20V
TypeP-Channel
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Introduction

AI Translation

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Features

AI Translation
  • Ultra Low On-Resistance
  • Advanced Process Technology
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free