MSKSEMI AO3403
| Manufacturer | MSKSEMIAsian Brands |
| MPN | AO3403 |
| LCSC Part # | C5379106 |
| Packaging | SOT-23-3L |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 3A SOT-23-3L |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | SOT-23-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.56W | |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF | |
| RDS(on) | 85mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 226pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | SOT-23-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 3A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.56W | |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF | |
| RDS(on) | 85mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 226pF |
Introduction
The third-generation power MOSFETs utilize advanced processing technology to achieve extremely low on-resistance per unit silicon area. This advantage, combined with the well-known fast switching speed and robust device design of power MOSFETs, provides designers with an exceptionally efficient and reliable device suitable for a wide range of applications.
The D²PAK is a surface-mount power package capable of accommodating die sizes up to HEX-4. Among all existing SMT packages, it offers the highest power handling capability and the lowest possible on-resistance. Due to its low internal connection resistance, the D²PAK is suited for high-current applications and can dissipate up to 2.0 W of power in typical SMT applications.
The through-hole versions (IRF9Z14L, SiHF9Z14L) are available for low-profile applications.
Features
- -30V, -3.0A, RDS(ON) = 85mΩ@VGS = - 10V
- Fast switching
- Green Device Available
- Suit for -4.5V Gate Drive Applications
Applications
- Notebook Load Switch
- Battery Protection
- Hand-held Instruments
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.052 | $ 0.52 |
| 100+ | $ 0.0411 | $ 4.11 |
| 300+ | $ 0.0357 | $ 10.71 |
| 3,000+ | $ 0.0316 | $ 94.80 |
| 6,000+ | $ 0.0283 | $ 169.80 |
| 9,000+ | $ 0.0267 | $ 240.30 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | SOT-23-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.56W | |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF | |
| RDS(on) | 85mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 226pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | SOT-23-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 3A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.56W | |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF | |
| RDS(on) | 85mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 226pF |
Introduction
The third-generation power MOSFETs utilize advanced processing technology to achieve extremely low on-resistance per unit silicon area. This advantage, combined with the well-known fast switching speed and robust device design of power MOSFETs, provides designers with an exceptionally efficient and reliable device suitable for a wide range of applications.
The D²PAK is a surface-mount power package capable of accommodating die sizes up to HEX-4. Among all existing SMT packages, it offers the highest power handling capability and the lowest possible on-resistance. Due to its low internal connection resistance, the D²PAK is suited for high-current applications and can dissipate up to 2.0 W of power in typical SMT applications.
The through-hole versions (IRF9Z14L, SiHF9Z14L) are available for low-profile applications.
Features
- -30V, -3.0A, RDS(ON) = 85mΩ@VGS = - 10V
- Fast switching
- Green Device Available
- Suit for -4.5V Gate Drive Applications
Applications
- Notebook Load Switch
- Battery Protection
- Hand-held Instruments
C5379106 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



