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Infineon IR2233JPBF product image
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Infineon IR2233JPBF

Manufacturer
Infineon
MPN
IR2233JPBF
LCSC Part #
C537615
Packaging
PLCC-32(16.6x16.6)
Customer #
Key Attributes
200mA 420mA PLCC-32(16.6x16.6) Gate Drivers RoHS
Datasheetpdf iconInfineon IR2233JPBF
RoHS Compliance1 documents available
In-Stock: 10
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Minimum: 1Multiple: 1Sales Unit: Piece
QtyUnit PriceTotal Amount
1+$ 12.8506$ 12.85
10+$ 11.0872$ 110.87
30+$ 10.0138$ 300.41
100+$ 9.1128$ 911.28
Standard Packaging1134/Full Tube

Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerInfineon
PackagingPLCC-32(16.6x16.6)
Input Logic Level - Low800mV
Rise Time90ns
Low Level Delay Time750ns
High Level Delay Time700ns
Fall Time40ns
Current - Output High(IOH)200mA
FeaturesEnable shutdown;Dead-time control;Interleaved conduction protection
Load TypeMOSFET、IGBT
Quiescent Current4mA
Input Logic Level - High2.2V
Driven ConfigurationThree Phase
Current - Output Low(IOL)420mA
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Introduction

AI Translation

The IR2133/IR2135/IR2233/IR2235 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. An independent operational amplifier provides an analog feedback of bridge current via an external current sense resistor. A current trip function which terminates all six outputs can also be derived from this resistor. A shutdown function is available to terminate all six outputs. An open drain FAULT signal is provided to indicate that an over-current or undervoltage shutdown has occurred. Fault conditions are cleared with the FLT-CLR lead. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts or 1200 volts.

Features

AI Translation
  • Floating channel designed for bootstrap operation Fully operational to +600V or +1200V Tolerant to negative transient voltage dV/dt immune
  • Gate drive supply range from 10V/12V to 20V DC and up to 25V for transient
  • Undervoltage lockout for all channels
  • Over-current shut down turns off all six drivers
  • Independent 3 half-bridge drivers
  • Matched propagation delay for all channels
  • 2.5V logic compatible
  • Outputs out of phase with inputs
  • All parts are also available LEAD-FREE