Infineon IPW60R099P7
| Manufacturer | |
| MPN | IPW60R099P7 |
| LCSC Part # | C537464 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20A TO-247-3 |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 117W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.952nF | |
| Gate Charge(Qg) | 45nC@400V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 117W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.952nF | |
| Gate Charge(Qg) | 45nC@400V |
Introduction
The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.
Features
- Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
- Significant reduction of switching and conduction losses
- Excellent ESD robustness ~2kV (HBM) for all products
- Better RDS(on)/package products compared to competition enabled by a low Ros(on)A (below 1Ohmmm²)
- Fully qualified acc. JEDEC for Industrial Applications
Applications
- PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 4.1614 | $ 4.16 |
| 10+ | $ 3.6685 | $ 36.69 |
| 30+ | $ 2.9966 | $ 89.90 |
| 90+ | $ 2.7006 | $ 243.05 |
| 510+ | $ 2.5639 | $ 1307.59 |
| 990+ | $ 2.5021 | $ 2477.08 |
Standard Packaging30/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 117W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.952nF | |
| Gate Charge(Qg) | 45nC@400V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 117W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.952nF | |
| Gate Charge(Qg) | 45nC@400V |
Introduction
The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.
Features
- Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
- Significant reduction of switching and conduction losses
- Excellent ESD robustness ~2kV (HBM) for all products
- Better RDS(on)/package products compared to competition enabled by a low Ros(on)A (below 1Ohmmm²)
- Fully qualified acc. JEDEC for Industrial Applications
Applications
- PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
C537464 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



