Infineon IPS60R1K0CE
| Manufacturer | |
| MPN | IPS60R1K0CE |
| LCSC Part # | C537267 |
| Packaging | TO-251-3 |
| Customer # | |
| Key Attributes | 650V 6.8A 3.5V 61W 1Ω@10V 1 N-channel TO-251-3 Single FETs, MOSFETs RoHS |
| Datasheet |  Infineon IPS60R1K0CE |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-251-3 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 6.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 61W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 280pF | |
| Gate Charge(Qg) | 13nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-251-3 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 6.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 61W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 280pF | |
| Gate Charge(Qg) | 13nC@10V |
Introduction
CoolMOS™ is a revolutionary technology for high-voltage power MOSFETs, designed based on the super junction (SJ) principle. CoolMOS™ CE is a cost-performance-optimized platform that meets the cost-sensitive application requirements of consumer and lighting markets while still conforming to the highest efficiency standards. This new series offers all the advantages of fast-switching SJ MOSFETs without sacrificing ease of use, delivering the best cost-to-performance ratio available on the market.
Features
- Extremely low losses due to ultra-low figure of merit Rdson*Qg and Eoss
- Extremely high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free molding compound
- Suitable for standard grade applications
Applications
- PFC stages, hard-switching PWM stages, and resonant switching stages in applications such as PC hosts, adapters, LCD and plasma TVs, and indoor lighting.
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.6691 | $ 0.67 |
| 200+ | $ 0.2601 | $ 52.02 |
| 500+ | $ 0.2506 | $ 125.30 |
| 1,500+ | $ 0.2458 | $ 368.70 |
Standard Packaging1500/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-251-3 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 6.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 61W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 280pF | |
| Gate Charge(Qg) | 13nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-251-3 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 6.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 61W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 280pF | |
| Gate Charge(Qg) | 13nC@10V |
Introduction
CoolMOS™ is a revolutionary technology for high-voltage power MOSFETs, designed based on the super junction (SJ) principle. CoolMOS™ CE is a cost-performance-optimized platform that meets the cost-sensitive application requirements of consumer and lighting markets while still conforming to the highest efficiency standards. This new series offers all the advantages of fast-switching SJ MOSFETs without sacrificing ease of use, delivering the best cost-to-performance ratio available on the market.
Features
- Extremely low losses due to ultra-low figure of merit Rdson*Qg and Eoss
- Extremely high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free molding compound
- Suitable for standard grade applications
Applications
- PFC stages, hard-switching PWM stages, and resonant switching stages in applications such as PC hosts, adapters, LCD and plasma TVs, and indoor lighting.
C537267 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IPS70R360P7S | Infineon | TO-251-3 | 10 | $ 2.3372 | ||
| IPSA70R450P7SAKMA1 | Infineon | TO-251-3 | 5 | $ 1.9718 | ||
| 7NM70G-TMN2-T | UTC | TO-251N | 1 | $ 0.4798 | ||
| IPS70R360P7S | Infineon | TO-251-3 | 77 | $ 5.3516 | ||
| IPSA70R360P7S | Infineon | TO-251-3 | 9 | $ 1.1682 | ||
| IPU60R1K0CE | Infineon | TO-251-3 | 0 | $ 0.2259 | ||
| IPS65R1K0CE | Infineon | TO-251-3 | 0 | $ 0.7484 | ||
| IPSA70R950CE | Infineon | TO-251-3 | 0 | $ 0.7317 | ||
| IPS70R950CE | Infineon | TO-251-3 | 0 | $ 0.7317 | ||
| IPS80R600P7 | Infineon | TO-251-3 | 0 | $ 1.7957 |