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Infineon IPP80N06S2-08
| Manufacturer | |
| MPN | IPP80N06S2-08 |
| LCSC Part # | C537249 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | 55V 80A 4V 215W 8mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS |
| Datasheet |  Infineon IPP80N06S2-08 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 215W | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 80A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 215W | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel |
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Features
AI Translation
- N-Channel - Enhancement Mode
- AEC-Q101 Automotive Grade Qualified
- MSL 1, 260°C Peak Reflow Temperature
- Operating Temperature up to 175°C
- RoHS Compliant (Lead-Free)
- Ultra-Low On-Resistance Rds(on)
- 100% Avalanche Tested
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.726 | $ 3.73 |
| 200+ | $ 1.4432 | $ 288.64 |
| 500+ | $ 1.3923 | $ 696.15 |
| 1,000+ | $ 1.366 | $ 1366.00 |
Standard Packaging500/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 215W | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 80A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 215W | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- N-Channel - Enhancement Mode
- AEC-Q101 Automotive Grade Qualified
- MSL 1, 260°C Peak Reflow Temperature
- Operating Temperature up to 175°C
- RoHS Compliant (Lead-Free)
- Ultra-Low On-Resistance Rds(on)
- 100% Avalanche Tested
C537249 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| DMNH6008SCT | DIODES | TO-220AB | 5 | $ 3.898 | ||
| MT06N008A | Jilin Sino-Microelectronics | TO-220C | 272 | $ 1.1885 | ||
| JCS110N07I | Jilin Sino-Microelectronics | TO-220C | 12 | $ 0.4104 | ||
| WSR180N15 | Winsok Semicon | TO-220 | 4 | $ 2.172 | ||
| HY3208NA3P | HUAYI | TO-220FB-3 | 199 | $ 0.5858 | ||
| AGM15T13C | AGMSEMI | TO-220 | 2 | $ 1.0414 | ||
| IRF3205PBF | Infineon | TO-220AB | 45,270 | $ 0.5256 | ||
| BRCS3205RA | BLUE ROCKET | TO-220 | 1,000 | $ 0.9391 | ||
| JCS3205CH-220C | Jilin Sino-Microelectronics | TO-220 | 5 | $ 0.7311 | ||
| IRFB4115PBF-CN | ChipNobo | TO-220 | 0 | $ 0.9963 |