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Infineon IPN70R2K0P7SRoHS

Manufacturer
Infineon
MPN
IPN70R2K0P7S
LCSC Part #
C537092
Packaging
SOT-223
Customer #
Key Attributes
MOSFET N-CH 700V 2A SOT-223
Datasheetpdf iconInfineon IPN70R2K0P7S
In-Stock: 3
3 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.5573$ 0.56
10+$ 0.4549$ 4.55
30+$ 0.4127$ 12.38
100+$ 0.3575$ 35.75
500+$ 0.3331$ 166.55
1,000+$ 0.3185$ 318.50
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingSOT-223
Operating Temperature-40℃~+150℃
Configuration-
Drain to Source Voltage700V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)2A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation6W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)1.64Ω@10V
Number1 N-channel
Input Capacitance(Ciss)130pF
Gate Charge(Qg)3.8nC@10V
Type-
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Introduction

AI Translation

CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching Superjunction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.

Features

AI Translation
  • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss
  • Excellent thermal behavior
  • Integrated ESD protection diode
  • Low switching losses (Eoss)
  • Product validation acc. JEDEC Standard

Applications

AI Translation
  • Flyback topologies used in Chargers
  • Adapters
  • Lighting Applications