Infineon IPI086N10N3 G
| Manufacturer | |
| MPN | IPI086N10N3 G |
| LCSC Part # | C536969 |
| Packaging | TO-262-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 80A TO-262-3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-262-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| RDS(on) | 7.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.99nF | |
| Gate Charge(Qg) | 42nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-262-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| RDS(on) | 7.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.99nF | |
| Gate Charge(Qg) | 42nC@10V |
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In-Stock: 15
15 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.817$ 1.4887 | $ 1.49 |
| 10+ | $ 3.2916$ 1.2838 | $ 12.84 |
| 30+ | $ 2.9801$ 1.1623 | $ 34.87 |
| 100+ | $ 2.664$ 1.0390 | $ 103.90 |
| 500+ | $ 2.5199$ 0.9828 | $ 491.40 |
| 1,000+ | $ 2.4532$ 0.9568 | $ 956.80 |
Standard Packaging500/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-262-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| RDS(on) | 7.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.99nF | |
| Gate Charge(Qg) | 42nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-262-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| RDS(on) | 7.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.99nF | |
| Gate Charge(Qg) | 42nC@10V |
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C536969 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



