Infineon IPG20N10S4-36A
| Manufacturer | |
| MPN | IPG20N10S4-36A |
| LCSC Part # | C536953 |
| Packaging | TDSON-8-4 |
| Customer # | |
| Key Attributes | 100V 20A 43W 36mΩ@10V 3.5V 2 N-Channel TDSON-8-4 FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8-4 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 20A | |
| Pd - Power Dissipation | 43W | |
| RDS(on) | 36mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Operating Temperature | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8-4 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 20A | |
| Pd - Power Dissipation | 43W | |
| RDS(on) | 36mΩ@10V |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Operating Temperature | -55℃~+175℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Dual N-Channel, Normally-On — Enhancement Mode
- AEC Q101 Qualified
- MSL 1, 260°C Peak Reflow Temperature
- 175°C Operating Temperature
- Green Product (RoHS Compliant)
- 100% Avalanche Tested
- Suitable for AOI
In-Stock: 30
30 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.2242 | $ 2.22 |
| 10+ | $ 2.1868 | $ 21.87 |
| 30+ | $ 2.1608 | $ 64.82 |
| 100+ | $ 2.1348 | $ 213.48 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8-4 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 20A | |
| Pd - Power Dissipation | 43W | |
| RDS(on) | 36mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Operating Temperature | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8-4 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 20A | |
| Pd - Power Dissipation | 43W | |
| RDS(on) | 36mΩ@10V |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Operating Temperature | -55℃~+175℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Dual N-Channel, Normally-On — Enhancement Mode
- AEC Q101 Qualified
- MSL 1, 260°C Peak Reflow Temperature
- 175°C Operating Temperature
- Green Product (RoHS Compliant)
- 100% Avalanche Tested
- Suitable for AOI
C536953 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

