Infineon IPG20N06S4-15A
| Manufacturer | |
| MPN | IPG20N06S4-15A |
| LCSC Part # | C536947 |
| Packaging | TDSON-8 |
| Customer # | |
| Key Attributes | 60V 20A 15.5mΩ@10V 50W 4V 2 N-Channel TDSON-8 FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 20A | |
| RDS(on) | 15.5mΩ@10V | |
| Pd - Power Dissipation | 50W | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.26nF | |
| Gate Charge(Qg) | 29nC@10V | |
| Operating Temperature | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 20A | |
| RDS(on) | 15.5mΩ@10V | |
| Pd - Power Dissipation | 50W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.26nF | |
| Gate Charge(Qg) | 29nC@10V | |
| Operating Temperature | -55℃~+175℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Dual N-channel enhancement mode, normally-off
- AEC-Q101 qualified
- MSL1 at peak reflow temperature up to 260°C
- Operating temperature up to 175°C
- Green product (RoHS compliant)
- 100% avalanche tested
- Suitable for AOI
In-Stock: 20
20 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.4767 | $ 3.48 |
| 10+ | $ 3.428 | $ 34.28 |
| 30+ | $ 3.3955 | $ 101.87 |
| 100+ | $ 3.363 | $ 336.30 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 20A | |
| RDS(on) | 15.5mΩ@10V | |
| Pd - Power Dissipation | 50W | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.26nF | |
| Gate Charge(Qg) | 29nC@10V | |
| Operating Temperature | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 20A | |
| RDS(on) | 15.5mΩ@10V | |
| Pd - Power Dissipation | 50W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.26nF | |
| Gate Charge(Qg) | 29nC@10V | |
| Operating Temperature | -55℃~+175℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Dual N-channel enhancement mode, normally-off
- AEC-Q101 qualified
- MSL1 at peak reflow temperature up to 260°C
- Operating temperature up to 175°C
- Green product (RoHS compliant)
- 100% avalanche tested
- Suitable for AOI
C536947 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

