Infineon IPG20N04S4-12
| Manufacturer | |
| MPN | IPG20N04S4-12 |
| LCSC Part # | C536930 |
| Packaging | TDSON-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 40V 20A TDSON-8 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8 | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 20A | |
| RDS(on) | 12.2mΩ@10V | |
| Pd - Power Dissipation | 41W | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.47nF | |
| Gate Charge(Qg) | 18nC@10V | |
| Operating Temperature | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8 | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 20A | |
| RDS(on) | 12.2mΩ@10V | |
| Pd - Power Dissipation | 41W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.47nF | |
| Gate Charge(Qg) | 18nC@10V | |
| Operating Temperature | -55℃~+175℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Dual N-channel Normal Level - Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS compliant)
- 100% Avalanche tested
In-Stock: 109
109 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.5678 | $ 1.57 |
| 10+ | $ 1.3599 | $ 13.60 |
| 30+ | $ 1.2461 | $ 37.38 |
| 100+ | $ 1.1178 | $ 111.78 |
| 500+ | $ 1.0609 | $ 530.45 |
| 1,000+ | $ 1.0349 | $ 1034.90 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8 | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 20A | |
| RDS(on) | 12.2mΩ@10V | |
| Pd - Power Dissipation | 41W | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.47nF | |
| Gate Charge(Qg) | 18nC@10V | |
| Operating Temperature | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8 | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 20A | |
| RDS(on) | 12.2mΩ@10V | |
| Pd - Power Dissipation | 41W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.47nF | |
| Gate Charge(Qg) | 18nC@10V | |
| Operating Temperature | -55℃~+175℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Dual N-channel Normal Level - Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS compliant)
- 100% Avalanche tested
C536930 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

