Zdjęcia poglądowe
Modele EDAEasyEDA
Infineon IPD70R2K0CE
| Producent | |
| Nr części prod. | IPD70R2K0CE |
| Nr LCSC | C536867 |
| Opak. | TO-252-3 |
| Numer Klienta | |
| Klucz. cechy | 700V 2.6A 3.5V 42W 2Ω@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS |
| Karta Katalogowa |  Infineon IPD70R2K0CE |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-252-3 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 163pF | |
| Gate Charge(Qg) | 7.8nC@10V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-252-3 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 163pF | |
| Gate Charge(Qg) | 7.8nC@10V |
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Opis
Tłumaczenie AI
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. CoolMOS CE is a cost-optimized platform that meets the highest efficiency standards while targeting cost-sensitive applications in the consumer and lighting markets. This new series delivers all the advantages of fast-switching SJ MOSFETs without compromising ease of use, offering the best cost-reduction performance ratio on the market.
Funkcje
Tłumaczenie AI
- Ultra-low losses due to extremely low figure of merit Rdson*Qg and Eoss
- Extremely high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free mold compound
- Suitable for standard grade applications
Zastosowania
Tłumaczenie AI
- (QR) flyback circuits in low-power chargers for mobile devices and power tools
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.5582 | $ 0.56 |
| 200+ | $ 0.2171 | $ 43.42 |
| 500+ | $ 0.2093 | $ 104.65 |
| 1,000+ | $ 0.2047 | $ 204.70 |
Standardowa Obudowa2500/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-252-3 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 163pF | |
| Gate Charge(Qg) | 7.8nC@10V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-252-3 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 163pF | |
| Gate Charge(Qg) | 7.8nC@10V |
Zgłoś błądPokaż podobne produkty (0) >
Opis
Tłumaczenie AI
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. CoolMOS CE is a cost-optimized platform that meets the highest efficiency standards while targeting cost-sensitive applications in the consumer and lighting markets. This new series delivers all the advantages of fast-switching SJ MOSFETs without compromising ease of use, offering the best cost-reduction performance ratio on the market.
Funkcje
Tłumaczenie AI
- Ultra-low losses due to extremely low figure of merit Rdson*Qg and Eoss
- Extremely high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free mold compound
- Suitable for standard grade applications
Zastosowania
Tłumaczenie AI
- (QR) flyback circuits in low-power chargers for mobile devices and power tools
C536867 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| IPD95R2K0P7ATMA1 | Infineon | TO-252 | 555 | $ 1.0466 | ||
| NCE70T1K2K | NCE | TO-252 | 1,534 | $ 0.6109 | ||
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| IPD80R2K0P7 | Infineon | DPAK | 25 | $ 0.723 | ||
| IPD70R600P7S | Infineon | TO-252-3 | 1,143 | $ 0.3927 | ||
| IPD80R2K0P7ATMA1 | Infineon | TO-252-3 | 0 | $ 0.7279 | ||
| TSM70N1R4CP ROG | Taiwan Semiconductor | TO-252(DPAK) | 0 | $ 1.6609 | ||
| IPD70R1K4P7SAUMA1 | Infineon | TO-252-3 | 0 | $ 0.7782 | ||
| ASD65R550E | ANHI | TO-252 | 0 | $ 0.5703 | ||
| STD4N90K5 | ST | DPAK | 0 | $ 2.8513 |