Infineon IPD60R600C6
| Manufacturer | |
| MPN | IPD60R600C6 |
| LCSC Part # | C536829 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 7.3A TO-252 |
| Datasheet |  Infineon IPD60R600C6 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 7.3A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 63W | |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF | |
| RDS(on) | 600mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 440pF | |
| Gate Charge(Qg) | 20.5nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 7.3A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 63W | |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF | |
| RDS(on) | 600mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 440pF | |
| Gate Charge(Qg) | 20.5nC |
Introduction
CoolMOS™ is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The CoolMOS™ C6 series combines the expertise of a leading SJ MOSFET supplier with best-in-class innovation. The offered devices deliver all the advantages of fast-switching SJ MOSFETs without sacrificing ease of use. Ultra-low switching and conduction losses enable switching applications to be more efficient, compact, lightweight, and thermally optimized.
Features
- Halogen free mold compound
Applications
- Power Factor Correction (PFC) stage
- Hard-switching PWM stage
- Resonant-switching PWM stage, e.g. for PC power supplies, adapters, LCD and plasma TVs, lighting, servers, telecom, and UPS
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.9249 | $ 0.92 |
| 10+ | $ 0.8308 | $ 8.31 |
| 30+ | $ 0.7798 | $ 23.39 |
| 100+ | $ 0.7224 | $ 72.24 |
| 500+ | $ 0.6969 | $ 348.45 |
| 1,000+ | $ 0.6841 | $ 684.10 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 7.3A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 63W | |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF | |
| RDS(on) | 600mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 440pF | |
| Gate Charge(Qg) | 20.5nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 7.3A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 63W | |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF | |
| RDS(on) | 600mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 440pF | |
| Gate Charge(Qg) | 20.5nC |
Introduction
CoolMOS™ is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The CoolMOS™ C6 series combines the expertise of a leading SJ MOSFET supplier with best-in-class innovation. The offered devices deliver all the advantages of fast-switching SJ MOSFETs without sacrificing ease of use. Ultra-low switching and conduction losses enable switching applications to be more efficient, compact, lightweight, and thermally optimized.
Features
- Halogen free mold compound
Applications
- Power Factor Correction (PFC) stage
- Hard-switching PWM stage
- Resonant-switching PWM stage, e.g. for PC power supplies, adapters, LCD and plasma TVs, lighting, servers, telecom, and UPS
C536829 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IPD80R600P7 | Infineon | TO-252-3 | 203 | $ 2.3138 | ||
| IPD70R360P7S | Infineon | TO-252 | 2,621 | $ 0.7011 | ||
| IPD60R650CE | Infineon | TO-252 | 44 | $ 0.879 | ||
| IPD65R600E6 | Infineon | TO-252 | 0 | $ 0.3092 | ||
| IPD65R600C6 | Infineon | TO-252-3 | 0 | $ 1.6651 | ||
| X600N65JMHE2 | XYD | TO-252-2L | 0 | $ 0.7419 | ||
| IPD60R600E6 | Infineon | TO-252-3 | 0 | $ 0.6564 | ||
| IPD70R600CE | Infineon | TO-252-3 | 0 | $ 0.9277 | ||
| TPD65R700MFD | WUXI UNIGROUP MICRO | TO-252-2 | 0 | $ 0.4143 | ||
| STD10LN80K5 | ST | DPAK | 0 | $ 1.7052 |