Infineon IPD60R280P7
| Manufacturer | |
| MPN | IPD60R280P7 |
| LCSC Part # | C536812 |
| Packaging | TO-252-3 |
| Customer # | |
| Key Attributes | 650V 8A 3.5V 53W 280mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS |
| Datasheet |  Infineon IPD60R280P7 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 53W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 761pF | |
| Gate Charge(Qg) | 18nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 53W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 761pF | |
| Gate Charge(Qg) | 18nC@10V |
Introduction
The CoolMOS 7th generation platform is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the advantages of fast-switching SJ MOSFETs with outstanding ease of use, such as extremely low ringing tendency, excellent robustness of the body diode under hard commutation, and superior ESD capability. In addition, ultra-low switching and conduction losses enable switching applications to be more efficient, compact, and thermally optimized.
Features
- Suitable for hard-switching and soft-switching (PFC and LLC) due to excellent commutation ruggedness
- Significantly reduced switching and conduction losses
- Outstanding ESD ruggedness across all products, >2kV (HBM)
- Low RDS(on)A (below 1Ohmmm²) enables superior RDS(on)/package compared to competing products
- Fully compliant with JEDEC industrial application standards
Applications
- PFC stage
- Hard-switching PWM stage
- Resonant switching stage for PC desktop, adapters, LCD and PDP TVs, lighting, servers, telecom, and UPS
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.1478 | $ 2.15 |
| 10+ | $ 1.8935 | $ 18.94 |
| 30+ | $ 1.7348 | $ 52.04 |
| 100+ | $ 1.5712 | $ 157.12 |
| 500+ | $ 1.4983 | $ 749.15 |
| 1,000+ | $ 1.4659 | $ 1465.90 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 53W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 761pF | |
| Gate Charge(Qg) | 18nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 53W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 761pF | |
| Gate Charge(Qg) | 18nC@10V |
Introduction
The CoolMOS 7th generation platform is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the advantages of fast-switching SJ MOSFETs with outstanding ease of use, such as extremely low ringing tendency, excellent robustness of the body diode under hard commutation, and superior ESD capability. In addition, ultra-low switching and conduction losses enable switching applications to be more efficient, compact, and thermally optimized.
Features
- Suitable for hard-switching and soft-switching (PFC and LLC) due to excellent commutation ruggedness
- Significantly reduced switching and conduction losses
- Outstanding ESD ruggedness across all products, >2kV (HBM)
- Low RDS(on)A (below 1Ohmmm²) enables superior RDS(on)/package compared to competing products
- Fully compliant with JEDEC industrial application standards
Applications
- PFC stage
- Hard-switching PWM stage
- Resonant switching stage for PC desktop, adapters, LCD and PDP TVs, lighting, servers, telecom, and UPS
C536812 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IPD60R280P7S | Infineon | TO-252-3 | 4,297 | $ 1.0238 | ||
| WMO15N70C2 | Wayon | TO-252 | 1,581 | $ 0.4934 | ||
| GC11N65K | GOFORD | TO-252-2 | 201 | $ 1.1976 | ||
| GC300N65K | GOFORD | TO-252 | 100 | $ 1.196 | ||
| RS70R380D | REASUNOS | TO-252 | 620 | $0.6036 $0.6353 | ||
| RS65R380BD | REASUNOS | TO-252 | 2,110 | $0.3629 $0.382 | ||
| RSU12N65D | REASUNOS | TO-252 | 1,561 | $0.4788 $0.504 | ||
| MSJU11N65A-TP | MCC | DPAK(TO-252) | 2,465 | $ 0.9601 | ||
| TSD65R300 | Truesemi | TO-252 | 17 | $ 0.6563 | ||
| NCE70T360K | NCE | TO-252 | 2,483 | $ 0.8534 |