Infineon IPD50R3K0CE
| Manufacturer | |
| MPN | IPD50R3K0CE |
| LCSC Part # | C536788 |
| Packaging | TO-252-3 |
| Customer # | |
| Key Attributes | 550V 2.6A 3.5V 26W 3Ω@13V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS |
| Datasheet |  Infineon IPD50R3K0CE |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 550V | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 26W | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 3Ω@13V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 84pF | |
| Gate Charge(Qg) | 4.3nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 550V | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 26W | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 3Ω@13V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 84pF | |
| Gate Charge(Qg) | 4.3nC@10V |
Introduction
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. CoolMOS CE is a cost-performance optimized platform that meets the cost-sensitive application requirements of the consumer and lighting markets while still complying with the highest efficiency standards. This new series offers all the advantages of fast-switching SJ MOSFETs without compromising ease of use, delivering the best cost-reduction-to-performance ratio available on the market.
Features
- Ultra-low losses due to extremely low figure-of-merit Rdson*Qg and Eoss
- Extremely high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free molding compound
- Suitable for standard grade applications
Applications
- PFC stages, hard-switching PWM stages, and resonant switching stages for applications such as PC hosts, adapters, LCD and plasma TVs, and indoor lighting.
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.2334 | $ 0.23 |
| 10+ | $ 0.2269 | $ 2.27 |
| 30+ | $ 0.2236 | $ 6.71 |
| 100+ | $ 0.2204 | $ 22.04 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 550V | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 26W | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 3Ω@13V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 84pF | |
| Gate Charge(Qg) | 4.3nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 550V | |
| Current - Continuous Drain(Id) | 2.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 26W | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 3Ω@13V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 84pF | |
| Gate Charge(Qg) | 4.3nC@10V |
Introduction
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. CoolMOS CE is a cost-performance optimized platform that meets the cost-sensitive application requirements of the consumer and lighting markets while still complying with the highest efficiency standards. This new series offers all the advantages of fast-switching SJ MOSFETs without compromising ease of use, delivering the best cost-reduction-to-performance ratio available on the market.
Features
- Ultra-low losses due to extremely low figure-of-merit Rdson*Qg and Eoss
- Extremely high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free molding compound
- Suitable for standard grade applications
Applications
- PFC stages, hard-switching PWM stages, and resonant switching stages for applications such as PC hosts, adapters, LCD and plasma TVs, and indoor lighting.
C536788 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IPD70R1K4P7SAUMA1 | Infineon | TO-252-3 | 379 | $ 0.7782 | ||
| DO05NG-C | DOINGTER | TO-252 | 2,325 | $0.1320 $0.1434 | ||
| IPD60R1K4C6ATMA1 | Infineon | TO-252 | 65 | $ 0.775 | ||
| CJU04N65 | JSCJ | TO-252-2L | 1,490 | $ 0.1958 | ||
| XR70R320 | XNRUSEMI | TO252-3L | 969 | $ 0.4067 | ||
| IPD60R1K0PFD7S | Infineon | TO-252-3 | 0 | $ 0.725 | ||
| IPD60R3K4CE | Infineon | TO-252-3 | 0 | $ 0.3853 | ||
| IPD65R1K4C6 | Infineon | TO-252-3 | 0 | $ 1.0281 | ||
| IPD80R2K0P7ATMA1 | Infineon | TO-252-3 | 0 | $ 0.7279 | ||
| X4N70DHE2 | XYD | TO-252-2L | 0 | $ 0.2162 |