Infineon FS50R06W1E3
| Manufacturer | |
| MPN | FS50R06W1E3 |
| LCSC Part # | C535524 |
| Packaging | - |
| Customer # | |
| Key Attributes | 205W 50A 600V IGBT Modules RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Pd - Power Dissipation | 205W | |
| Td(off) | 200ns | |
| Td(on) | 23ns | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 95pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Gate Charge(Qg) | 500nC@30V | |
| Vce Saturation(VCE(sat)) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 1.2mJ | |
| Turn-On Energy (Eon) | 460uJ | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 3.1nF | |
| Output Capacitance(Coes) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Pd - Power Dissipation | 205W | |
| Td(off) | 200ns | |
| Td(on) | 23ns | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 95pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Gate Charge(Qg) | 500nC@30V | |
| Vce Saturation(VCE(sat)) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 1.2mJ | |
| Turn-On Energy (Eon) | 460uJ | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 3.1nF | |
| Output Capacitance(Coes) | - |
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In-Stock: 1
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 45.2296 | $ 45.23 |
| 10+ | $ 44.0485 | $ 440.49 |
Standard Packaging24/Full Tray | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Pd - Power Dissipation | 205W | |
| Td(off) | 200ns | |
| Td(on) | 23ns | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 95pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Gate Charge(Qg) | 500nC@30V | |
| Vce Saturation(VCE(sat)) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 1.2mJ | |
| Turn-On Energy (Eon) | 460uJ | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 3.1nF | |
| Output Capacitance(Coes) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Pd - Power Dissipation | 205W | |
| Td(off) | 200ns | |
| Td(on) | 23ns | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 95pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Gate Charge(Qg) | 500nC@30V | |
| Vce Saturation(VCE(sat)) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 1.2mJ | |
| Turn-On Energy (Eon) | 460uJ | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 3.1nF | |
| Output Capacitance(Coes) | - |
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C535524 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |

