VISHAY SUD40N08-16-E3
| Manufacturer | |
| MPN | SUD40N08-16-E3 |
| LCSC Part # | C5346014 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 80V 40A TO-252 |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 370pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.96nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 370pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.96nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Type | N-Channel |
Introduction
Truesemi Super Junction Field Effect Transistors (SJ-FET) are a new generation of high-voltage MOSFET series, employing an advanced charge balance mechanism to deliver excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, provide superior switching performance, and withstand extremely high dv/dt rates and higher avalanche energy.
- SJ-FET for AC/DC power conversion in various switching mode operations, enabling higher efficiency.
Features
- TrenchFET Power MOSFET
- 175 °C Maximum Junction Temperature
- 100% Rg Tested
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.3009 | $ 2.30 |
| 10+ | $ 2.1776 | $ 21.78 |
| 30+ | $ 2.1046 | $ 63.14 |
| 100+ | $ 2.03 | $ 203.00 |
| 500+ | $ 1.9959 | $ 997.95 |
| 1,000+ | $ 1.9813 | $ 1981.30 |
Standard Packaging2000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 370pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.96nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 370pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.96nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Type | N-Channel |
Introduction
Truesemi Super Junction Field Effect Transistors (SJ-FET) are a new generation of high-voltage MOSFET series, employing an advanced charge balance mechanism to deliver excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, provide superior switching performance, and withstand extremely high dv/dt rates and higher avalanche energy.
- SJ-FET for AC/DC power conversion in various switching mode operations, enabling higher efficiency.
Features
- TrenchFET Power MOSFET
- 175 °C Maximum Junction Temperature
- 100% Rg Tested
C5346014 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



