Infineon FP50R12KT4G
| Manufacturer | |
| MPN | FP50R12KT4G |
| LCSC Part # | C534050 |
| Packaging | - |
| Customer # | |
| Key Attributes | 280W 50A 1.2kV IGBT Module IGBT Modules RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Pd - Power Dissipation | 280W | |
| Td(off) | 280ns | |
| Td(on) | 60ns | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 100pF | |
| IGBT Type | IGBT Module | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Gate Charge(Qg) | 380nC@15V | |
| Vce Saturation(VCE(sat)) | 2.15V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 2.8mJ | |
| Turn-On Energy (Eon) | 3.5mJ | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 2.8nF | |
| Output Capacitance(Coes) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Pd - Power Dissipation | 280W | |
| Td(off) | 280ns | |
| Td(on) | 60ns | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 100pF | |
| IGBT Type | IGBT Module |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Gate Charge(Qg) | 380nC@15V | |
| Vce Saturation(VCE(sat)) | 2.15V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 2.8mJ | |
| Turn-On Energy (Eon) | 3.5mJ | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 2.8nF | |
| Output Capacitance(Coes) | - |
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In-Stock: 20
20 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 51.0178 | $ 51.02 |
| 30+ | $ 48.5764 | $ 1457.29 |
Standard Packaging10/Full Tray | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Pd - Power Dissipation | 280W | |
| Td(off) | 280ns | |
| Td(on) | 60ns | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 100pF | |
| IGBT Type | IGBT Module | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Gate Charge(Qg) | 380nC@15V | |
| Vce Saturation(VCE(sat)) | 2.15V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 2.8mJ | |
| Turn-On Energy (Eon) | 3.5mJ | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 2.8nF | |
| Output Capacitance(Coes) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Pd - Power Dissipation | 280W | |
| Td(off) | 280ns | |
| Td(on) | 60ns | |
| Current - Collector(Ic) | 50A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 100pF | |
| IGBT Type | IGBT Module |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Gate Charge(Qg) | 380nC@15V | |
| Vce Saturation(VCE(sat)) | 2.15V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 2.8mJ | |
| Turn-On Energy (Eon) | 3.5mJ | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 2.8nF | |
| Output Capacitance(Coes) | - |
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |

