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Infineon FP35R12W2T7_B11 product image
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Infineon FP35R12W2T7_B11RoHS

Manufacturer
Infineon
MPN
FP35R12W2T7_B11
LCSC Part #
C534034
Packaging
Through Hole,62.8x56.7mm
Customer #
Key Attributes
EasyPIM Modul mit TRENCHSTOP IGBT7 und Emitter Controlled 7 Diode und PressFIT/NTC
Datasheetpdf iconInfineon FP35R12W2T7_B11
In-Stock: 33
33 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 67.2917$ 67.29
30+$ 65.811$ 1974.33
Standard Packaging15/Full Tray
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerInfineon
PackagingThrough Hole,62.8x56.7mm
Pd - Power Dissipation-
Td(off)260ns
Td(on)37ns
Current - Collector(Ic)35A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)23pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.15V@0.75mA
Gate Charge(Qg)548nC@600V
Vce Saturation(VCE(sat))1.6V@35A,15V
Reverse Recovery Time(trr)-
Switching Energy(Eoff)2.39mJ
Turn-On Energy (Eon)2.62mJ
Operating Temperature-40℃~+175℃
Input Capacitance(Cies)6.62nF
Output Capacitance(Coes)-
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Features

AI Translation
  • Low VCEsat
  • TrenchstopTM IGBT7
  • Overload operation up to 175℃
  • 2.5 kV AC 1min insulation
  • Al₂O₃ substrate with low thermal resistance
  • High power density
  • Compact design
  • PressFIT contact technology

Applications

AI Translation
  • Auxiliary inverters
  • Air conditioning
  • Motor drives