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RENESAS AT45DB041E-SHN2B-TRoHS

Manufacturer
RENESAS
MPN
AT45DB041E-SHN2B-T
LCSC Part #
C5334561
Packaging
SOIC-8
Customer #
Key Attributes
Serial Peripheral Interface Compatible Memory with Flexible Programming and Erase Options
Datasheetpdf iconRENESAS AT45DB041E-SHN2B-T
In-Stock: 10
10 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 3.1526$ 3.15
10+$ 2.6871$ 26.87
30+$ 2.3958$ 71.87
100+$ 2.0979$ 209.79
500+$ 1.9629$ 981.45
1,000+$ 1.9059$ 1905.90
Standard Packaging2000/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerRENESAS
PackagingSOIC-8
Operating Temperature-40℃~+85℃
FeaturesPower-on reset;Hardware write protection;Software write protection;Absolute write protection
Memory Size2Mbit
Voltage - Supply1.65V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency85MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)30ms@(2kB)
Write Cycle Time(tWC)-
Page Programming Time (Tpp)1.5ms
Standby Supply Current25uA
InterfaceSPI
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Features

AI Translation
  • Single 1.65 V
  • 3.6 V supply
  • Serial Peripheral Interface (SPI) compatible
  • Supports SPI modes 0 and 3
  • Supports RapidS™ operation
  • Continuous read capability through entire array
  • Up to 85 MHz
  • Low-power read option up to 15 MHz
  • Clock-to-output time (tV) of 6 ns maximum
  • User-configurable page size
  • 256 bytes per page
  • 264 bytes per page (default)
  • Page size can be factory pre-configured for 256 bytes
  • Two fully independent SRAM data buffers (256/264 bytes)
  • Allows receiving data while reprogramming the main memory array
  • Flexible programming options
  • Byte/Page Program (1 to 256/264 bytes) directly into main memory
  • Buffer Write
  • Buffer to Main Memory Page Program
  • Flexible erase options
  • Page Erase (256/264 bytes)
  • Block Erase (2 kB)
  • Sector Erase (64 kB)
  • Chip Erase (4 Mbits)
  • Program and Erase Suspend/Resume
  • Advanced hardware and software data protection features
  • Individual sector protection
  • Individual sector lockdown to make any sector permanently read-only
  • 128-byte, One-Time Programmable (OTP) Security Register
  • 64 bytes factory programmed with a unique identifier
  • 64 bytes user programmable
  • Hardware and software controlled reset options
  • JEDEC Standard Manufacturer and Device ID Read
  • Low-power dissipation
  • 400 nA Ultra-Deep Power-Down current (typical)
  • 3 µA Deep Power-Down current (typical)
  • 25 µA Standby current (typical)
  • 7mA Active Read current (typical @ 15 MHz)
  • Endurance:
    • 100,000 program/erase cycles (-40°C to +85°C)
    • 10,000 program/erase cycles (-40°C to +125°C)
  • Data retention: 20 years
  • Complies with full industrial temperature range
  • Green (Pb/Halide-free/RoHS compliant) packaging options
  • 8-lead SOIC (0.150" wide and 0.208" wide)
  • 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
  • 8-ball Ultra-thin UBCA (6 x 6 x 0.6mm)
  • Die in Wafer Form (contact factory for availability)