RENESAS AT45DB641E-MHN-T

The AT45DB641E is a 1.7V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications. The AT45DB641E also supports the RapidS serial interface for applications requiring very high speed operation. Its 69,206,016 bits of memory are organized as 32,768 pages of 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB641E also contains two SRAM buffers of 256/264 bytes each. Interleaving between both buffers can dramatically increase a system's ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pad memory, and E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses a serial interface to sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates simplified hardware layout, increases system reliability, minimizes switching noise, and reduces package size. The device is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage, and low-power are essential. To allow for simple in-system re-programmability, the AT45DB641E does not require high input voltages for programming. The device operates from a single 1.7V to 3.6V power supply for the erase and program and read operations. The AT45DB641E is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK). All programming and erase cycles are self-timed.

• Single 1.7V - 3.6V supply
• Serial Peripheral Interface (SPI) compatible Supports SPI modes 0 and 3 Supports RapidS™ operation
• Continuous read capability through entire array Up to 85MHz Low-power read option up to 15MHz Clock-to-output time (tV) of 8ns maximum
• User configurable page size 256 bytes per page 264 bytes per page (default) Page size can be factory pre-configured for 256 bytes
• Two fully independent SRAM data buffers (256/264 bytes) Allows receiving data while reprogramming the main memory array
• Flexible programming options Byte/Page Program (1 to 256/264 bytes) directly into main memory Buffer Write | Buffer to Main Memory Page Program
• Flexible erase options Page Erase (256/264 bytes) Block Erase (2KB) Sector Erase (256KB) Chip Erase (64-Mbits)
• Program and Erase Suspend/Resume
• Advanced hardware and software data protection features Individual sector protection Individual sector lockdown to make any sector permanently read-only
• 128-byte, One-Time Programmable (OTP) Security Register 64 bytes factory programmed with a unique identifier 64 bytes user programmable
• Hardware and software controlled reset options
• JEDEC Standard Manufacturer and Device ID Read
• Low-power dissipation 400nA Ultra-Deep Power-Down current (typical) 5μA Deep Power-Down current (typical) 25μA Standby current (typical) 7mA Active Read current (typical)
• Endurance: 100,000 program/erase cycles per page minimum
• Data retention: 20 years
• Complies with full industrial temperature range
• Green (Pb/Halide-free/RoHS compliant) packaging options 8-lead SOIC (0.208" wide) 8-pad Ultra-thin DFN (5x6x0.6mm) 8-pad Very-thin DFN (6x8x1.0mm) Die in Wafer Form