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Infineon AUIRF1404ZSTRL
| Manufacturer | |
| MPN | AUIRF1404ZSTRL |
| LCSC Part # | C533228 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 180A D2PAK |
| Datasheet |  Infineon AUIRF1404ZSTRL |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 180A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 550pF | |
| RDS(on) | 3.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.34nF | |
| Gate Charge(Qg) | 150nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 180A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 550pF | |
| RDS(on) | 3.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.34nF | |
| Gate Charge(Qg) | 150nC |
Introduction
Specifically designed for Automotive applications, this HEXFET @arrow Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- 17500 Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant Automotive Qualified
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 5.0624 | $ 5.06 |
| 10+ | $ 4.9909 | $ 49.91 |
| 30+ | $ 4.9422 | $ 148.27 |
| 100+ | $ 4.895 | $ 489.50 |
Standard Packaging800/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 180A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 550pF | |
| RDS(on) | 3.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.34nF | |
| Gate Charge(Qg) | 150nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 180A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 550pF | |
| RDS(on) | 3.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.34nF | |
| Gate Charge(Qg) | 150nC |
Introduction
Specifically designed for Automotive applications, this HEXFET @arrow Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- 17500 Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant Automotive Qualified
C533228 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MPT037N08 | Minos | TO-263 | 484 | $ 0.6414 | ||
| WSK220N04 | Winsok Semicon | TO-263 | 828 | $ 0.9958 | ||
| IRF1404ZSTRLPBF | Infineon | D2PAK | 864 | $ 1.3978 | ||
| HY3906B | HUAYI | TO-263-2L | 23 | $ 0.7778 | ||
| JMTE025N04D | Jiangsu JieJie Microelectronics | TO-263 | 180 | $ 0.9038 | ||
| HYG020N04NA1B | HUAYI | TO-263-2L | 7 | $ 0.6786 | ||
| SP011N03GHTD | Siliup | TO-263 | 472 | $ 0.8481 | ||
| PGY10N037 | HT(Shenzhen Jinyu Semicon) | TO-263 | 1,507 | $0.9391 $0.9885 | ||
| WSK180N04 | Winsok Semicon | TO-263-2 | 0 | $1.3774 $1.5304 | ||
| HY4004B | HUAYI | TO-263-2 | 0 | $ 0.8822 |