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HUASHUO HSBG2301RoHS

Manufacturer
HUASHUOAsian Brands
MPN
HSBG2301
LCSC Part #
C53243979
Packaging
DFN1006-3
Customer #
Key Attributes
20V 2A 550mV 270mW 130mΩ@4.5V 1 P-Channel P-Channel DFN1006-3 Single FETs, MOSFETs RoHS
Datasheetpdf iconHUASHUO HSBG2301
In-Stock: 9,620
9,620 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0581$ 0.58
100+$ 0.048$ 4.80
300+$ 0.0429$ 12.87
1,000+$ 0.0391$ 39.10
5,000+$ 0.0361$ 180.50
10,000+$ 0.0345$ 345.00
Standard Packaging10000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingDFN1006-3
Drain to Source Voltage20V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)2A
Output Capacitance(Coss)30pF
Gate Threshold Voltage (Vgs(th))550mV
Pd - Power Dissipation270mW
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)130mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)248pF
Gate Charge(Qg)3nC@4.5V
TypeP-Channel
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Introduction

AI Translation

HSBG2301 is a P-channel MOSFET utilizing a high cell density trench process, offering excellent on-resistance and gate charge performance for most synchronous buck converter applications. This product complies with RoHS and halogen-free environmental requirements, and has passed comprehensive functional reliability qualification.

Features

AI Translation
  • Ultra-low gate charge
  • Low threshold voltage
  • Suitable for high-side switching applications
  • Advanced high cell-density trench technology

Applications

AI Translation
  • Synchronous buck converter